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INVESTIGATORS AT YEREVAN STATE UNIVERSITY HAVE PUBLISHED NEW DATA ON APPLIED PHYSICS
Science Letter
November 18, 2008
According to recent research from Yerevan, Armenia, "The liquid
phase epitaxy technique is used for self-assembled InAsSbP-based
strain-induced islands and quantum dots (QD) formation on InAs(1 0 0)
substrates. The morphology, dimensions (size and shape), distribution
density and composition of these objects are investigated by scanning
electron and atomic force microscopies (SEM and AFM) and found to be
self-organized from pyramids to globes."
"In addition, we perform energy dispersive x-rays analysis measurements
at the top and bottom angles of the InAsSbP quaternary pyramids and
lattice mismatch ratio calculations. They show that the strength
at the top of the pyramids is lower than at the bottom angles,
and that the island size becomes smaller when the lattice mismatch
decreases. The QD average density ranges from 5 to 7 x 10(9) cm(-2),
with height and width dimensions from 0.7 nm to 25 nm and 20 nm to
80 nm, respectively," wrote K.M. Gambaryan and colleagues, Yerevan
State University (see also Applied Physics).
The researchers concluded: "A critical size (similar to 500 nm) for
the transformation of the InAsSbP-based strain-induced pyramid shape
to globe shape is determined."
Gambaryan and colleagues published their study in the Journal of
Physics D - Applied Physics (Strain-induced InAsSbP islands and quantum
dots grown by liquid phase epitaxy on a InAs(100) substrate. Journal
of Physics D - Applied Physics, 2008;41(16):62004).
For additional information, contact K.M. Gambaryan, Yerevan State
University, Dept. of Physics Semicond & Microelect, A Manoukian Str 1,
Yerevan 375025, Armenia.
Publisher contact information for the Journal of Physics D - Applied
Physics is: IOP Publishing Ltd., Dirac House, Temple Back, Bristol
BS1 6BE, England.
Science Letter
November 18, 2008
According to recent research from Yerevan, Armenia, "The liquid
phase epitaxy technique is used for self-assembled InAsSbP-based
strain-induced islands and quantum dots (QD) formation on InAs(1 0 0)
substrates. The morphology, dimensions (size and shape), distribution
density and composition of these objects are investigated by scanning
electron and atomic force microscopies (SEM and AFM) and found to be
self-organized from pyramids to globes."
"In addition, we perform energy dispersive x-rays analysis measurements
at the top and bottom angles of the InAsSbP quaternary pyramids and
lattice mismatch ratio calculations. They show that the strength
at the top of the pyramids is lower than at the bottom angles,
and that the island size becomes smaller when the lattice mismatch
decreases. The QD average density ranges from 5 to 7 x 10(9) cm(-2),
with height and width dimensions from 0.7 nm to 25 nm and 20 nm to
80 nm, respectively," wrote K.M. Gambaryan and colleagues, Yerevan
State University (see also Applied Physics).
The researchers concluded: "A critical size (similar to 500 nm) for
the transformation of the InAsSbP-based strain-induced pyramid shape
to globe shape is determined."
Gambaryan and colleagues published their study in the Journal of
Physics D - Applied Physics (Strain-induced InAsSbP islands and quantum
dots grown by liquid phase epitaxy on a InAs(100) substrate. Journal
of Physics D - Applied Physics, 2008;41(16):62004).
For additional information, contact K.M. Gambaryan, Yerevan State
University, Dept. of Physics Semicond & Microelect, A Manoukian Str 1,
Yerevan 375025, Armenia.
Publisher contact information for the Journal of Physics D - Applied
Physics is: IOP Publishing Ltd., Dirac House, Temple Back, Bristol
BS1 6BE, England.