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U.S., ARMENIAN INVENTORS DEVELOP SEMICONDUCTOR WAFER CHARACTERIZATION SYSTEM
US Fed News
September 2, 2008 Tuesday 6:15 AM EST
ALEXANDRIA, Va., Sept. 2 -- Bhushan L. Sopori of Denver, and Artak
Hambarian of Yerevan, Armenia, have developed an optic probe for
semiconductor characterization.
According to the U.S. Patent & Trademark Office: "Described herein is
an optical probe for use in characterizing surface defects in wafers,
such as semiconductor wafers. The optical probe detects laser light
reflected from the surface of the wafer within various ranges of
angles. Characteristics of defects in the surface of the wafer are
determined based on the amount of reflected laser light detected in
each of the ranges of angles. Additionally, a wafer characterization
system is described that includes the described optical probe."
The inventors were issued U.S. Patent No. 7,420,669 on Aug. 26.
The patent has been assigned to Midwest Research Institute, Kansas
City, Mo.
The original application was filed
on July 1, 2004, and is available at:
http://patft.uspto.gov/netacgi/nph-Parser?Sect 1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=% 2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G& ;l=50&s1=7,420,669.PN.&OS=PN/7,420,669& ;RS=PN/7,420,669.
For more information about US Fed News federal patent awards please
contact: Myron Struck, Managing Editor/US Bureau, US Fed News, Direct:
703/866-4708, Cell: 703/304-1897, [email protected]
From: Emil Lazarian | Ararat NewsPress
US Fed News
September 2, 2008 Tuesday 6:15 AM EST
ALEXANDRIA, Va., Sept. 2 -- Bhushan L. Sopori of Denver, and Artak
Hambarian of Yerevan, Armenia, have developed an optic probe for
semiconductor characterization.
According to the U.S. Patent & Trademark Office: "Described herein is
an optical probe for use in characterizing surface defects in wafers,
such as semiconductor wafers. The optical probe detects laser light
reflected from the surface of the wafer within various ranges of
angles. Characteristics of defects in the surface of the wafer are
determined based on the amount of reflected laser light detected in
each of the ranges of angles. Additionally, a wafer characterization
system is described that includes the described optical probe."
The inventors were issued U.S. Patent No. 7,420,669 on Aug. 26.
The patent has been assigned to Midwest Research Institute, Kansas
City, Mo.
The original application was filed
on July 1, 2004, and is available at:
http://patft.uspto.gov/netacgi/nph-Parser?Sect 1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=% 2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G& ;l=50&s1=7,420,669.PN.&OS=PN/7,420,669& ;RS=PN/7,420,669.
For more information about US Fed News federal patent awards please
contact: Myron Struck, Managing Editor/US Bureau, US Fed News, Direct:
703/866-4708, Cell: 703/304-1897, [email protected]
From: Emil Lazarian | Ararat NewsPress